The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Sep. 14, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minki Kim, Suwon-si, KR;

Seungduk Baek, Hwaseong-si, KR;

Won Il Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05076 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05576 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/08145 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor package includes: a semiconductor substrate; a through electrode that penetrates the semiconductor substrate; a first pad disposed on the through electrode; and a dielectric structure disposed on the semiconductor substrate, wherein a lower portion of the dielectric structure at least partially surrounds the through electrode, wherein an upper portion of the dielectric structure at least partially surrounds the first pad, wherein the dielectric structure includes: a first dielectric pattern; an etch stop pattern disposed on the first dielectric pattern; and a second dielectric pattern spaced apart from the first dielectric pattern by the etch stop pattern, wherein the first pad is in contact with the through electrode, the first dielectric pattern, the etch stop pattern, and second dielectric pattern, and wherein a top surface of the through electrode is at a level higher than a level of a top surface of the first dielectric pattern.


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