The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Oct. 25, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Junhyoung Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a plurality of gate electrodes on a substrate to be spaced apart from each other in a vertical direction; a plurality of channel structures penetrating through the gate electrodes and extending in the vertical direction; a string separation insulation layer penetrating through two topmost gate electrodes and extending in a first horizontal direction; a plurality of bit line contacts on the plurality of channel structures; and a plurality of bit lines on the plurality of bit line contacts. Each of the bit lines includes a first segment extending in a second horizontal direction; a second segment spaced apart from the first segment in the first horizontal direction and extending in the second horizontal direction; and a first bending portion connecting the first segment to the second segment and extending at inclination angle of about 20 to 70 degrees with respect to the second horizontal direction.


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