The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Apr. 18, 2024
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Misaki Meguro, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Naoko Kodama, Matsumoto, JP;
Yasunori Agata, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/265 (2006.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01); H10D 84/60 (2025.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); H10D 8/411 (2025.01); H10D 12/481 (2025.01); H10D 84/617 (2025.01);
Abstract
There is provided a semiconductor device that includes a semiconductor substrate, which has an upper surface and a lower surface, and a drift region of an n-type conductivity provided at a position including the center of the semiconductor substrate in a depth direction connecting the upper surface and the lower surface. Over the entire part of the drift region in the depth direction, a donor concentration of the drift region is higher than a base doping concentration of the semiconductor substrate.