The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jun. 08, 2021
Keio University, Tokyo, JP;
Ibaraki University, Mito, JP;
National Institute for Materials Science, Tsukuba, JP;
Ayabo Corporation, Anjo, JP;
Atsushi Nakajima, Yokohama, JP;
Hironori Tsunoyama, Yokohama, JP;
Mika Uno, Hitachi, JP;
Hiroyuki Gunji, Hitachi, JP;
Toshihiro Ando, Tsukuba, JP;
Keizo Tsukamoto, Anjo, JP;
Masahide Tona, Anjo, JP;
Naoyuki Hirata, Anjo, JP;
KEIO UNIVERSITY, Tokyo, JP;
IBARAKI UNIVERSITY, Mito, JP;
NATIONAL INSTITUTE FOR MATERIALS, Tsukuba, JP;
AYABO CORPORATION, Anjo, JP;
Abstract
Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.