The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Sep. 26, 2022
Applicant:
Tokai Carbon Co., Ltd., Tokyo, JP;
Inventors:
Yohei Harada, Tokyo, JP;
Junya Oishi, Tokyo, JP;
Assignee:
TOKAI CARBON CO., LTD., Minato-ku, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); B24B 7/22 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3255 (2013.01); B24B 7/228 (2013.01); H01J 2237/334 (2013.01); H01L 21/3065 (2013.01);
Abstract
Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 μm or less, Wa (10 to 20 mm) is 0.13 μm or less, and Wa (20 to 30 mm) is 0.20 μm or less.