The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jan. 31, 2023
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Chulmin Jung, San Diego, CA (US);
David Li, San Diego, CA (US);
Po-Hung Chen, Los Angeles, CA (US);
Ayan Paul, San Diego, CA (US);
Derek Yang, Poway, CA (US);
Chun-Yen Lin, Taoyuan Dist, TW;
Assignee:
QUALCOMM INCORPORATED, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01);
Abstract
A memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. The sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.