The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

May. 31, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yue Gou, Beijing, CN;

Yingming Liu, Beijing, CN;

Liang Cui, Beijing, CN;

Xiufeng Li, Beijing, CN;

Yanling Han, Beijing, CN;

Yaqian Ji, Beijing, CN;

Chenyang Zhang, Beijing, CN;

Peixiao Li, Beijing, CN;

Yuzhen Guo, Beijing, CN;

Yingzi Wang, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06V 40/13 (2022.01); H10N 30/30 (2023.01); H10N 39/00 (2023.01);
U.S. Cl.
CPC ...
G06V 40/1306 (2022.01); H10N 30/302 (2023.02); H10N 39/00 (2023.02);
Abstract

An ultrasonic sensor, a preparation method of the ultrasonic sensor, and a display apparatus are provided. The ultrasonic sensor includes a texture recognition region and a contrast region. The contrast region is located on at least one side of the texture recognition region. The texture recognition region includes at least one recognizing unit, and the contrast region includes at least one contrast unit. The at least one recognizing unit includes a first dielectric material layer, and the at least one contrast unit includes a second dielectric material layer. The first dielectric material layer and the second dielectric material layer are made of a same material. The first dielectric material layer exhibits piezoelectric properties. A piezoelectric strain constant of the first dielectric material layer is greater than a piezoelectric strain constant of the second dielectric material layer.


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