The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Sep. 12, 2022
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Yan Cui, Beijing, CN;

Jun Luo, Beijing, CN;

Meiyin Yang, Beijing, CN;

Jing Xu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 15/20 (2006.01); G01R 19/25 (2006.01); G01R 19/30 (2006.01); G01R 33/07 (2006.01); G01R 33/09 (2006.01); G06N 3/0464 (2023.01); G06N 3/065 (2023.01);
U.S. Cl.
CPC ...
G01R 15/202 (2013.01); G01R 19/25 (2013.01); G01R 19/30 (2013.01); G01R 33/07 (2013.01); G01R 33/093 (2013.01); G06N 3/065 (2023.01); G06N 3/0464 (2023.01);
Abstract

The present application discloses a spin Hall device, a method for obtaining a Hall voltage, and a max pooling method. The spin Hall device includes a cobalt ferroboron layer. A top view and a bottom view of the spin Hall device are completely the same as a cross-shaped graph that has two axes of symmetry perpendicular to each other and equally divided by each other. The spin Hall device of the present application has non-volatility and analog polymorphic characteristics, can be used for obtaining a Hall voltage and applied to various circuits, is simple in structure and small in size, can save on-chip resources, and can meet computation requirements.


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