The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Aug. 09, 2022
Applicant:
Lumigntech Co., Ltd., Gyeonggi-do, KR;
Inventors:
Assignee:
LumiGNtech Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C30B 25/16 (2006.01); C30B 29/16 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C30B 25/16 (2013.01); C30B 29/16 (2013.01); C30B 35/00 (2013.01);
Abstract
The present invention relates to a GaOcrystal film deposition method according to HVPE, a deposition apparatus, and a GaOcrystal film-deposited substrate using the same. According to an embodiment of the present invention, a GaOcrystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.