The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Jan. 11, 2024
Applicant:

Ns Materials Inc., Fukuoka, JP;

Inventors:

Kazunori Iida, Fukuoka, JP;

Emi Tsutsumi, Fukuoka, JP;

Mika Niwaki, Fukuoka, JP;

Jun Kaneno, Fukuoka, JP;

Soichiro Nikata, Fukuoka, JP;

Hidetoshi Tanaka, Fukuoka, JP;

Assignee:

TOPPAN INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); B29C 48/00 (2019.01); B29C 48/08 (2019.01); B29C 48/21 (2019.01); B32B 27/20 (2006.01); B32B 27/30 (2006.01); B32B 27/32 (2006.01); B32B 27/36 (2006.01); C08J 5/18 (2006.01); B29K 23/00 (2006.01); B29K 33/00 (2006.01); B29K 67/00 (2006.01); B29K 105/16 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/02 (2013.01); B29C 48/022 (2019.02); B29C 48/08 (2019.02); B29C 48/21 (2019.02); B32B 27/20 (2013.01); B32B 27/308 (2013.01); B32B 27/325 (2013.01); B32B 27/36 (2013.01); C08J 5/18 (2013.01); B29K 2023/38 (2013.01); B29K 2033/12 (2013.01); B29K 2067/003 (2013.01); B29K 2105/162 (2013.01); B29K 2995/0039 (2013.01); B32B 2307/422 (2013.01); B32B 2307/702 (2013.01); B32B 2307/732 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C08J 2333/04 (2013.01); C08J 2345/00 (2013.01); C08J 2367/02 (2013.01);
Abstract

A wavelength conversion member, for a backlight, is provided. The wavelength conversion member includes a stack of a plurality of resin layers, with at least one of the plurality of resin layers containing quantum dots. The plurality of resin layers is integrally molded through co-extrusion, and forms a three-layer structure comprising a middle layer containing the quantum dots and upper and lower layers that do not contain the quantum dots. The upper layer and the lower layer are respectively on an upper side and a lower side of the middle layer. The upper and lower layers each contain a light scattering agent. Each of the plurality of resin layers is directly joined together with a bonding layer at an interface between the middle layer and the upper layer and not at an interface between the middle layer and the lower layer.


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