The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Mar. 01, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bert Jan Offrein, Schoenenberg, CH;

Valeria Bragaglia, Thalwil, CH;

Folkert Horst, Wettingen, CH;

Antonio La Porta, Kilchberg, CH;

Roger F. Dangel, Zug, CH;

Daniel S. Jubin, Langnau am Albis, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G06N 3/065 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); G06N 3/065 (2023.01); H10B 63/84 (2023.02); H10N 70/023 (2023.02); H10N 70/8833 (2023.02);
Abstract

An electrical memristive device has a layer structure. The layer structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfOlayer, where 1.3±0.1≤y<1.9±0.1, as well as a WOlayer in direct contact with the HfOlayer, where 2.5±0.1≤x<2.9±0.1. The bilayer arrangement involves sub-stoichiometric layers of HfOand WO, where the WOlayer may advantageously have a polycrystalline structure in the monoclinic phase, while the HfOlayer is preferably amorphous.


Find Patent Forward Citations

Loading…