The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
May. 17, 2022
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); G01R 33/098 (2013.01); G11B 5/3909 (2013.01); H01F 10/324 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); B82Y 25/00 (2013.01);
Abstract
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.