The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Aug. 25, 2021
The Regents of the University of California, Oakland, CA (US);
Alireza Khademhosseini, Los Angeles, CA (US);
Shiming Zhang, Los Angeles, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A low power-consumption iontronic pressure sensor is disclosed that is based on OECT where an ionic hydrogel is used as solid gating medium for pressure sensing transistor elements formed thereon. The pressure sensor includes a substrate containing one or more pressure sensing transistor elements with each transistor element including a source electrode, a drain electrode, and a channel formed from a material comprising an electrically conducting polymer. A microstructured solid gel electrolyte having a plurality of microstructures formed thereon serves as the gating medium and is disposed atop the channel. A gate electrode is disposed on the microstructured solid gel electrolyte. The resultant iontronic pressure sensor may be operated at voltages less than 1 V, with a power-consumption between ˜10-10μW, while maintaining a tunable sensitivity between 1˜10 kPa.