Photoelectric conversion device

Abstract

Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insulating layer, openings are formed at regions A each not overlapping the p-side electrodes and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes apart from the regions A, the length of a current path in the p-type layer can be made substantially larger than the layer thickness.