The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jul. 13, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Yoshiyuki Kurokawa, Sagamihara, JP;

Takayuki Ikeda, Atsugi, JP;

Hikaru Tamura, Zama, JP;

Munehiro Kozuma, Isehara, JP;

Masataka Ikeda, Atsugi, JP;

Takeshi Aoki, Atsugi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H04N 25/76 (2023.01); H10D 30/67 (2025.01); H10F 30/223 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80377 (2025.01); H04N 25/76 (2023.01); H10D 30/6755 (2025.01); H10F 30/2235 (2025.01); H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/811 (2025.01); H10F 39/026 (2025.01);
Abstract

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.


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