The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Feb. 24, 2021
Applicant:
Proterial, Ltd., Tokyo, JP;
Inventors:
Keisuke Kobayashi, Tokyo, JP;
Akio Shima, Tokyo, JP;
Assignee:
Proterial, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/04 (2006.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/0262 (2013.01); H01L 21/0445 (2013.01); H10D 12/031 (2025.01); H10D 30/66 (2025.01);
Abstract
A SiC wafer including a SiC substrate and an epitaxial layer formed on the SiC substrate and containing SiC is provided, and a composition ratio of C—Si of an upper surface of the epitaxial layer is 50 atm % or less.