The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jan. 17, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yi-Chiau Huang, Fremont, CA (US);

Pierre Tomasini, Sunnyvale, CA (US);

Abhishek Dube, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/815 (2025.01); H01L 21/02 (2006.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8164 (2025.01); H01L 21/0245 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H10D 30/6735 (2025.01);
Abstract

Silicon germanium (SiGe)/silicon containing superlattice structures and methods for forming the same are provided. Various embodiments utilize SiGe layers in a SiGe/Si superlattice structure, which include varying concentrations of germanium throughout the layer. For example, in some embodiments, for each SiGe layer there is a core SiGe film with a low Ge content and two thinner SiGe layers or cladding layers positioned on opposing sides of the core SiGe film with each of the SiGe cladding layers having a higher Ge content then the core SiGe film. Various embodiments provide for SiGe layers having a germanium depth profile enabling strained SiGe superlattice deposition on Si{110} substrates.


Find Patent Forward Citations

Loading…