The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Sep. 28, 2022
Applicant:

Fujitsu Limited, Kawasaki, JP;

Inventors:

Kenichi Kawaguchi, Ebina, JP;

Tsuyoshi Takahashi, Ebina, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 8/75 (2025.01); H01L 21/02 (2006.01); H10D 8/01 (2025.01); H10D 62/10 (2025.01); H10D 62/824 (2025.01); H10D 84/00 (2025.01); H10D 84/05 (2025.01);
U.S. Cl.
CPC ...
H10D 62/122 (2025.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02603 (2013.01); H01L 21/0262 (2013.01); H01L 21/02642 (2013.01); H10D 8/053 (2025.01); H10D 8/75 (2025.01); H10D 62/824 (2025.01); H10D 84/05 (2025.01); H10D 84/221 (2025.01);
Abstract

A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.


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