The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Mar. 11, 2021
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Tetsuya Kakehata, Isehara, JP;
Yasuhiro Jinbo, Isehara, JP;
Yuji Egi, Atsugi, JP;
Fumito Isaka, Zama, JP;
Shuntaro Kochi, Yokohama, JP;
Masahiro Takahashi, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.