The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Aug. 03, 2022
Auo Corporation, Hsinchu, TW;
Chen-Shuo Huang, Hsinchu, TW;
Shang-Lin Wu, Hsinchu, TW;
Kuo-Kuang Chen, Hsinchu, TW;
Chih-Hung Tsai, Hsinchu, TW;
AUP Corporation, Hsinchu, TW;
Abstract
An active device substrate includes a substrate, a first thin film transistor located above the substrate and a second thin film transistor located above the substrate. The first thin film transistor includes a first metal oxide layer, a first gate, a first source and a first drain. A first gate dielectric layer and a second gate dielectric layer are located between the first gate and the first metal oxide layer. The second thin film transistor includes a second metal oxide layer, a second gate, a second source and a second drain. The second gate dielectric layer is located between the second gate and the second metal oxide layer, and the second metal oxide layer is located between the first gate dielectric layer and the second gate dielectric layer. The first gate and the second gate belong to a same patterned layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile