The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Mar. 07, 2022
Denso Corporation, Kariya, JP;
Kenji Kouno, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a source electrode, a drain electrode and a gate. The gate controls a current flowing between the source electrode and the drain electrode. Capacitance between the gate and the drain electrode is first capacitance. Capacitance between the gate and the source electrode is second capacitance. A sum of the first capacitance and the second capacitance is equal to third capacitance. Total switching loss is a sum of first switching loss and second switching loss. The first switching loss is defined by a current variation rate, and the second switching loss is defined by a voltage variation rate. A capacitance ratio of the first capacitance to the third capacitance is set to a ratio to satisfying a relationship that the total switching loss is smaller than a predetermined value.