The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Feb. 17, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Shiro Hino, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
To mitigate adverse effects on a surface electrode of a semiconductor device. The semiconductor device includes: a first well region formed in a surface layer of an upper surface of a drift layer; a gate electrode; a second well region surrounding the first well region as seen in plan view; and a gate portion covering an interlayer insulation film and the gate electrode exposed from the interlayer insulation film. An outside edge portion of the gate electrode is farther from the first well region than an outside edge portion of the gate portion and closer to the first well region than an outside edge portion of the second well region.