Polysilicon resistors, methods for manufacturing the same, and successive approximation register analog-to-digital converter

Abstract

The present disclosure provides a polysilicon resistor, a method for manufacturing the same, and a successive approximation register analog-to-digital converter. A polysilicon resistor includes a first silicon substrate; a first silicon oxide layer disposed on the first silicon substrate; a second silicon substrate disposed on the first silicon oxide layer, wherein an insulating isolation structure extends through the second silicon substrate and divides the second silicon substrate into a plurality of substrate isolation areas separated from each other; a second silicon oxide layer disposed on the second silicon substrate; and a polysilicon resistor layer disposed on the second silicon oxide layer, wherein the polysilicon resistor layer includes a plurality of polysilicon resistor blocks separated from each other, the plurality of polysilicon resistor blocks is arranged in one-to-one correspondence with the plurality of substrate isolation areas, and the plurality of polysilicon resistor blocks are connected in series.