The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Apr. 20, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinseong Lee, Gyeonggi-do, KR;
Kyounghee Kim, Hwaseong-si, KR;
Dongsoo Woo, Seoul, KR;
Kyosuk Chae, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including a cell active pattern; a cell gate structure connected to the cell active pattern; a peripheral active pattern; a peripheral gate structure connected to the peripheral active pattern; a conductive pattern connected to the peripheral active pattern, the cell gate structure, or the peripheral gate structure; a capacitor structure electrically connected to the cell active pattern; an interlayer insulating layer surrounding the capacitor structure; and a peripheral contact connected to the conductive pattern while extending through the interlayer insulating layer, wherein the interlayer insulating layer includes a first material layer contacting the capacitor structure, and a second material layer on the first material layer, the peripheral contact includes a first portion contacting the first material layer, and a second portion contacting the second material layer, and a maximum width of the first portion is greater than a minimum width of the second portion.