The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Aug. 20, 2021
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

John A. Logan, Lawrence, MA (US);

Clay T. Long, Medford, MA (US);

Adam E. Peczalski, Everett, MA (US);

Assignee:

Raytheon Company, Arlington, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
H03H 9/17 (2013.01); H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/13 (2013.01);
Abstract

A bulk acoustic wave (BAW) resonator includes a piezoelectric layer oriented so that an N-polar surface forms a frontside surface that faces away from the substrate while a metal-polar surface forms the backside surface and faces toward the substrate. A process for the manufacture of a bulk acoustic wave (BAW) resonator includes orienting a piezoelectric layer on a substrate so that an N-polar surface forms a frontside surface that faces away from the substrate while a metal-polar surface forms the backside surface and faces toward the substrate; etching a via though the backside of the substrate to the metal-polar surface of the piezoelectric layer; and removing etch residue from a sidewall of the resonator cavity.


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