The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Oct. 23, 2020
Applicant:
Ams Ag, Premstätten, AT;
Inventors:
Georg Parteder, Sankt Ruprecht an der Raab, AT;
Thomas Bodner, Seiersberg, AT;
Assignee:
AMS AG, Premstätten, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H10D 62/17 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H10D 62/235 (2025.01); H10F 39/811 (2025.01);
Abstract
A method is proposed of producing a semiconductor body with a trench. The semiconductor body comprises a substrate. The method comprising the step of etching the trench into the substrate using an etching mask. An oxide layer is formed at least on a sidewall of the trench by oxidation of the substrate. A passivation layer is formed on the oxide layer and the bottom of the trench. The passivation layer is removed from the bottom of the trench. Finally, a metallization layer is deposited into the trench.