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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12362191 B1

PDFFull Text
Date of Patent:
Jul. 15, 2025

Filed:

Jan. 09, 2024

Methods and devices related to radio frequency devices

Applicant:

Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;

Inventors:

Hans Taddiken, Munich, DE;

Christian Butschkow, Munich, DE;

Andrea Cattaneo, Taufkirchen, DE;

Henning Feick, Dresden, DE;

Dominik Heiss, Munich, DE;

Christoph Kadow, Gauting, DE;

Uwe Seidel, Munich, DE;

Valentyn Solomko, Munich, DE;

Anton Steltenpohl, Munich, DE;

Assignee:

Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Mohammad A Rahman

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/58 (2006.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01); H10D 84/00 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/02016 (2013.01); H01L 21/26506 (2013.01); H01L 21/3226 (2013.01); H01L 21/76 (2013.01); H01L 21/76264 (2013.01); H01L 23/3171 (2013.01); H01L 23/58 (2013.01); H10D 12/035 (2025.01); H10D 62/124 (2025.01); H10D 84/00 (2025.01); H10D 86/201 (2025.01); H01L 23/291 (2013.01); H10D 62/104 (2025.01);
Abstract

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

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