The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Sep. 19, 2022
Applicant:

Richtek Technology Corporation, Zhubei, TW;

Inventors:

Chin-Chin Tsai, Tainan, TW;

Yong-Zhong Hu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2025.01); H01L 21/768 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 64/00 (2025.01); H10D 64/66 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28229 (2013.01); H01L 21/76897 (2013.01); H10D 1/043 (2025.01); H10D 1/714 (2025.01); H10D 30/0221 (2025.01); H10D 30/603 (2025.01); H10D 64/111 (2025.01); H10D 64/661 (2025.01); H10D 84/811 (2025.01);
Abstract

A polysilicon-insulator-polysilicon (PIP) structure includes: a first polysilicon region formed on a substrate; a first insulation region formed outside one side of the first polysilicon region and adjoined to the first polysilicon region in a horizontal direction; and a second polysilicon region formed outside one side of the first insulation region. The first polysilicon region, the first insulation region and the second polysilicon region are adjoined in sequence in the horizontal direction. The second polysilicon region is formed outside the first insulation region by a first self-aligned process step, and the first insulation region is formed outside the first polysilicon region by a second self-aligned process step.


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