The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Aug. 31, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Yoichi Minemura, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract

A semiconductor storage device includes a first word line, a first insulating layer extending along the first word line, a first memory cell connected to the first word line, a second memory cell connected to the first word line, a first bit line connected to the first memory cell, a second bit line connected to the second memory cell, and a control circuit. The second memory cell is farther from the first insulating layer than the first memory cell. The control circuit is configured to apply a first voltage to the first bit line during a read operation of the first memory cell, and apply a second voltage to the second bit line during a read operation of the second memory cell. The second voltage is higher than the first voltage.


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