The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Sep. 30, 2022
International Business Machines Corporation, Armonk, NY (US);
Pouya Hashemi, Purchase, NY (US);
Christopher Safranski, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A magnetic random access memory (MRAM) apparatus and method are provided. The apparatus includes a magnetic tunnel junction (MTJ) stack; a spin-orbit-torque (SOT) layer that underlies the MTJ stack; and a dielectric pillar that underlies the SOT layer and the MTJ stack. The SOT layer has a stepped profile. The method includes forming a dielectric base of a first dielectric material and a dielectric pillar of a second dielectric material, wherein the dielectric pillar protrudes from the dielectric base, forming a first intermediate structure by depositing a first layer of conductive material onto the dielectric base, sufficiently thick to cover the pillar and the base, forming a planarized structure by planarizing the first intermediate structure to reveal the pillar, and depositing a second layer of spin-orbit-torque metal onto the planarized structure.