The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jul. 03, 2023
Sandisk Technologies Llc, Addison, TX (US);
Iris Lu, Fremont, CA (US);
Yonggang Wu, San Jose, CA (US);
Kou Tei, San Jose, CA (US);
Ohwon Kwon, Pleasanton, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Techniques are presented to reduce sense amplifier noise from parasitic capacitances that can affect the internal transfer of a data value from a data latch to a sensing node. To transfer the data value, the sensing node is pre-charged and the data value used to set the control gate voltage on a transistor in a discharge path for the sensing node. In the discharge path, the transistor is connected in series with a switch, so that when the switch is turned on, the data value on the transistor's control gate will determine whether or not the sensing node discharges. To reduce noise in the process, before the data value is used to bias the discharge path transistor's control gate, a node between the transistor and switch is charged. Additionally, a lower voltage level can be used to turn on the discharge path switch.