The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jul. 21, 2021
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Jun Ku Ahn, Icheon, KR;

Gwang Sun Jung, Icheon, KR;

Jong Ho Lee, Icheon, KR;

Uk Hwang, Icheon, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02);
Abstract

A semiconductor device may include a first electrode, a second electrode, an insulating layer interposed between the first electrode and the second electrode and including an opening having an inclined sidewall, a variable resistance layer formed in the opening, and a liner interposed between the variable resistance layer and the insulating layer and between the variable resistance layer and the first electrode. The variable resistance layer includes a first surface and a second surface, the first surface facing the first electrode and having a first area, the second surface facing the second electrode and having a second area different from the first area. The variable resistance layer maintains an amorphous state during a program operation.


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