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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12356858 B1

PDFFull Text
Date of Patent:
Jul. 08, 2025

Filed:

Aug. 06, 2021

Method for the production of a single-crystal film, in particular piezoelectric

Applicant:

Soitec, Bernin, FR;

Inventors:

Bruno Ghyselen, Seyssinet, FR;

Jean-Marc Bethoux, La Buisse, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:

TraskBritt

Primary Examiner:

Jeffrey D Washville

Int. Cl.
CPC ...
H10N 30/093 (2023.01); C01G 31/02 (2006.01); C01G 33/00 (2006.01); C01G 35/00 (2006.01); C30B 25/18 (2006.01); C30B 29/22 (2006.01); C30B 29/30 (2006.01); H01L 21/762 (2006.01); H03H 9/02 (2006.01); H03H 9/54 (2006.01); H03H 9/64 (2006.01); H10N 30/072 (2023.01); H10N 30/076 (2023.01); H10N 30/079 (2023.01); H10N 30/853 (2023.01);
U.S. Cl.
CPC ...
H10N 30/093 (2023.02); C30B 25/186 (2013.01); C30B 29/22 (2013.01); C30B 29/30 (2013.01); H01L 21/76254 (2013.01); H03H 9/02031 (2013.01); H03H 9/02574 (2013.01); H03H 9/54 (2013.01); H03H 9/64 (2013.01); H10N 30/072 (2023.02); H10N 30/079 (2023.02); H10N 30/8542 (2023.02); C01G 31/02 (2013.01); C01G 33/00 (2013.01); C01G 35/00 (2013.01); H10N 30/076 (2023.02);
Abstract

A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the 'seed layer' from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A'B′Oon piezoelectric material ABOof the seed layer, where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

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