Transistor integration with stacked single-photon avalanche diode (spad) pixel arrays

Abstract

Disclosed herein are photodetectors using arrays of pixels with single-photon avalanche diodes (SPADs). The pixel arrays may have configurations that include one or more control transistors for each SPAD collocated on the same chip or wafer as the pixels and located on a surface of the wafer opposite to the light gathering surface of the pixel arrays. The control transistors may be positioned or configured for interconnection with a logic chip that is bonded to the wafer of the pixel array. The pixels may be formed in a substrate having doping gradient. The control transistors may be positioned on or within the SPADs, or adjacent to, but isolated from, the SPADs. Isolation between the individual SPADs and the respective control transistors may make use of shallow trench isolation regions or deep trench isolation regions.