The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Mar. 02, 2022
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventor:

Kennith Kin Leong, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/56 (2006.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/911 (2025.01); H03K 17/56 (2013.01); H10D 89/611 (2025.01); H10D 89/814 (2025.01);
Abstract

A semiconductor device includes a semiconductor body having an active region and a substrate region that is disposed beneath the active region, and a bidirectional switch formed in the semiconductor body. The bidirectional switch includes first and second gate structures that are each configured to control a conductive state of an electrically conductive channel that is disposed in the active region, and first and second input-output terminals that are each in ohmic contact with the electrically conductive channel. A passive substrate voltage discharge circuit in parallel with the bidirectional switch is configured to discharge a voltage of the substrate region in both directions of the bidirectional switch. The passive substrate voltage discharge circuit includes first and second normally-on switches connected in anti-series between the first and second input-output terminals in a common source configuration with the substrate region as a midpoint.


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