The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Aug. 08, 2022
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;

Inventors:

Zhifu Li, Hubei, CN;

Guanghui Liu, Hubei, CN;

Fei Ai, Hubei, CN;

Dewei Song, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 30/6723 (2025.01); H10D 30/6757 (2025.01); H10D 86/421 (2025.01);
Abstract

A semiconductor device and an electronic device are provided. The semiconductor device includes an insulating substrate and a thin film transistor layer. The thin film transistor layer includes a first active layer and a first insulating layer disposed on the first active layer, and a convex portion is formed on the first insulating layer. The thin film transistor layer further includes a second active layer and a third active layer disposed on both sidewalls and an upper surface of the convex portion, one end of the first active layer is connected to the second active layer, and another end of the first active layer is connected to the third active layer.


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