The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Sep. 06, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Kijoon Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H01L 21/02 (2006.01); H10B 12/00 (2023.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10D 64/513 (2025.01); H01L 21/02107 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/488 (2023.02); H10D 62/80 (2025.01);
Abstract

An integrated circuit device including a substrate including a word line trench and a first recess adjacent to a first side wall portion of an inner wall of the word line trench, a channel region on the inner wall and extending in a first direction parallel to an upper surface of the substrate, the channel region including a first channel region in a portion of the substrate adjacent to the inner wall and a second channel region on the inner wall and including a two-dimensional (2D) material of a first conductivity type, a gate insulating layer on the second channel region, a word line on the gate insulating layer and inside the word line trench, and a source region in a first recess and including the 2D material of the first conductivity type may be provided.


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