The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jul. 21, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Yuhki Fujino, Kanazawa Ishikawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/117 (2025.01); H10D 30/0291 (2025.01); H10D 30/66 (2025.01); H10D 62/393 (2025.01); H10D 64/01 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions a plurality of conductive parts, and a gate electrode. The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The conductive parts are located in the first semiconductor region with insulating parts interposed. The second semiconductor region is located on a portion of the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The gate electrode is located on the second semiconductor region with a gate insulating layer interposed. The second electrode is located on the second and third semiconductor regions, and the gate electrode and electrically connected with the second and third semiconductor regions, and conductive parts.


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