The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Feb. 22, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Kanako Komatsu, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/60 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/603 (2025.01); H10D 30/66 (2025.01); H10D 62/115 (2025.01); H10D 62/116 (2025.01); H10D 62/124 (2025.01); H10D 62/151 (2025.01); H10D 64/111 (2025.01); H10D 64/519 (2025.01); H10D 64/516 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate, an insulating member provided on the semiconductor substrate and an electrode disposed on the semiconductor substrate and on the insulating member. The insulating member includes a plurality of first portions and a plurality of second portions thinner than the first portions. The first portions and the second portions are arranged alternately along a first direction, the first direction being parallel to a region of an upper surface of the semiconductor substrate not contacting the insulating member.


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