The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Mar. 09, 2022
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a group of negatively-charged ions. The gate electrode is located between the source and drain electrodes to define a drift region between the gate and drain electrodes. A group of negatively-charged ions are implanted into the drift region and over the 2DEG region and spaced apart from the gate and drain electrodes and spaced apart from an area directly beneath the gate and drain electrodes. The gate electrode is closer to the negatively-charged ions than the drain electrode, such that the negatively-charged ions deplete at least one portion of the 2DEG region which is near the gate electrode.