Semiconductor devices including capacitor electrodes

Abstract

A semiconductor device includes a first structure including a peripheral circuit and a second structure on the first structure. The second structure includes: a stack structure including first and second stack structures; separation structures passing through the first stack structure; a memory vertical structure between the separation structures and passing through the first stack structure; and a capacitor including first and second capacitor electrodes passing through the second stack structure and extending parallel to each other. The first stack structure includes spaced apart gate electrodes and interlayer insulating layers alternately stacked therewith. The second stack structure includes spaced apart first insulating layers, and second insulating layers alternately stacked therewith. Each of the first and second capacitor electrodes has a linear shape. The first and second insulating layers include a different material from each other. The second insulating layers include the same material as the interlayer insulating layers.