The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Aug. 30, 2021
Renesas Electronics Corporation, Tokyo, JP;
Yanzhe Wang, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
Characteristics of a semiconductor device having a non-volatile memory are improved. The non-volatile memory has the following configuration: a semiconductor substrate; a first gate electrode portion arranged over the semiconductor substrate; a second gate electrode portion arranged over the semiconductor substrate so as to be adjacent to the first gate electrode portion; a first insulating film formed between the first gate electrode portion and the semiconductor substrate; a second insulating film formed between the second gate electrode portion and the semiconductor substrate and having a charge storage portion therein; and a first side wall insulating film arranged on a side surface side of the second gate electrode portion opposite to the first gate electrode portion, the charge storage portion being made of a high dielectric constant film containing hafnium and oxygen, and a gap being provided between the first side wall insulating film and the charge storage portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile