The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Sep. 08, 2022
Nanya Technology Corporation, New Taipei, TW;
Wei Zhong Li, Taoyuan, TW;
Hsih-Yang Chiu, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipel, TW;
Abstract
A semiconductor structure includes a substrate, an anti-fuse, first and second transistors, a contact structure, and a dielectric layer. The substrate includes a well region and first and second conductivity type doped regions in the well region, in which the second conductivity type doped region surrounds the first conductivity type doped region and includes a first portion and a second portion perpendicular to the first portion in a top view. The anti-fuse is in an anti-fuse region of the first conductivity type doped region. The first and second transistors are in the well region. The anti-fuse is disposed between the first and second transistors, and the anti-fuse is electrically connected to the first and second transistors. The contact structure is above the anti-fuse. The dielectric layer is between the contact structure and the anti-fuse region of the first conductivity type doped region.