The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Oct. 20, 2022
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventor:

Shohei Imai, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2006.01); H03F 1/56 (2006.01); H03F 3/20 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H03F 1/56 (2013.01);
Abstract

A first transistor having a base or a gate supplied with a high-frequency signal through a capacitor, and supplied with a bias current through a resistive element, a second transistor having a base or a gate connected to an emitter or a source of the first transistor, and a collector or a drain connected to an output terminal, and a third transistor having a collector or a drain connected to the base or the gate of the first transistor, and an emitter or a source connected to reference potential are provided, and the third transistor is provided such that a current flowing through the collector or the drain of the third transistor increases when a current flowing through the collector or the drain of the second transistor increases.


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