The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

May. 24, 2019
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

John E. Bowers, Santa Barbara, CA (US);

Arthur Gossard, Santa Barbara, CA (US);

Daehwan Jung, Goleta, CA (US);

Kunal Mukherjee, Goleta, CA (US);

Justin Norman, Goleta, CA (US);

Jennifer Selvidge, Goleta, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3406 (2013.01); H01S 5/3412 (2013.01); H01S 5/34353 (2013.01); H01S 5/3436 (2013.01);
Abstract

A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.


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