The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Dec. 08, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Choung Ki Song, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 23/66 (2013.01); H01L 2223/6616 (2013.01); H01L 2224/08146 (2013.01);
Abstract

A semiconductor device may include: a first substrate; a first high-frequency signal through electrode and a first low-frequency signal through electrode passing through the first substrate; a first high-frequency signal conductive pattern and a first low-frequency signal conductive pattern respectively connected to the first high-frequency signal through electrode and the first low-frequency signal through electrode; and one or more first high-frequency signal connection electrodes and one or more first low-frequency signal connection electrodes respectively connected to the first high-frequency signal conductive pattern and the first low-frequency signal conductive pattern, wherein an area of the first low-frequency signal conductive pattern is larger than an area of the first high-frequency signal conductive pattern.


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