The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jan. 18, 2023
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Shih-Ping Lee, Hsinchu, TW;
Mao-Hsing Chiu, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A semiconductor structure including the following components is provided. A first device structure includes a first substrate, a first dielectric structure, a first landing pad, and a first capping layer. A second device structure is disposed on the first device structure. The second device structure includes a second substrate, a second dielectric structure, a stop layer, and a second landing pad. The thickness of the stop layer is greater than the thickness of the first capping layer. A first TSV structure is disposed in the second substrate, the second dielectric structure, and the first dielectric structure. The first TSV structure passes through the first capping layer and is electrically connected to the first landing pad. A second TSV structure is disposed in the second substrate and the second dielectric structure. The second TSV structure passes through the stop layer and is electrically connected to the second landing pad.