The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jun. 10, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eui Bok Lee, Seoul, KR;
Rakhwan Kim, Suwon-si, KR;
Wandon Kim, Seongnam-si, KR;
Seowoo Nam, Seoul, KR;
Sunyoung Noh, Hwaseong-si, KR;
Ki Chul Park, Suwon-si, KR;
Jongchan Shin, Gwacheon-si, KR;
Minjoo Lee, Seoul, KR;
Hyunbae Lee, Seoul, KR;
Seungseok Ha, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Disclosed is a semiconductor device including a substrate, a first interlayer dielectric layer on the substrate, a plurality of first vias in the first interlayer dielectric layer, a second interlayer dielectric layer on the first interlayer dielectric layer, and a first power line and a first lower line in the second interlayer dielectric layer that are electrically connected to respective ones of the first vias. A first width in a first direction of the first power line is greater than a second width in the first direction of the first lower line. The first power line includes a first metallic material. The first lower line includes a second metallic material. The first vias includes a third metallic material. The first, second, and third metallic materials are different from each other.