The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
May. 03, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are a method of forming an optical proximity correction (OPC) model and/or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an average image of a plurality of images taken using one or more scanning electron microscopes, and a graphic data system (GDS) image, which is obtained by imaging a designed layout, aligning the SEM image and the GDS image, performing an image filtering process on the SEM image, extracting a contour from the SEM image, and verifying the contour. The verifying of the contour may be performed using a genetic algorithm. Variables in the genetic algorithm may include first parameters related to the image alignment process, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.