The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Sep. 19, 2023
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chao-Wen Lay, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); G11C 5/063 (2013.01); H01L 21/76828 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H10B 12/482 (2023.02);
Abstract
A semiconductor device includes a semiconductor structure including a conductive feature therein, a bitline over the semiconductor structure, a spacer on a sidewall of the bitline, wherein the first spacer is made of SiCO, a dielectric layer over a top surface of the bitline; and a contact in contact with the dielectric layer and the spacer and connected to the conductive feature of the semiconductor structure.